| PART |
Description |
Maker |
| FS50SMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFT12N100 IXFT10N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
From old datasheet system
|
IXYS[IXYS Corporation]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FS3KMA-5A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1931 |
Power MOSFETs / VR Series
|
Shindengen
|
| FS5KM-10A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1195 |
Power MOSFETs / VR Series
|
Shindengen
|
| FS50KMJ-03F |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY8BCH-02F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
